IRLML9303TRPBF

Specifications

Continuous Drain Current Id

-2.3A

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Package Shape

RECTANGULAR

Rise Time

14ns

Radyasyon Dayanımı

No

Pin Sayısı

3

Saturation Current

1

Package Description

HALOGEN FREE AND ROHS COMPLIANT, MICRO-3

Drainsource On Resistancemax

0.165 Ω

Configuration

SINGLE WITH BUILT-IN DIODE

Polaritychannel Type

P-CHANNEL

Ambalaj

Tape & Reel (TR)

Fall Time Typ

8.6 ns

Nem Hassasiyeti (MSL)

1 (Unlimited)

Switching Voltage

12 (DC) V

Çalışma Sıcaklığı

-55°C~150°C TJ

Fabrika Tedarik Süresi

12 Weeks

Fet Type

P-Channel

Direnç

165MOhm

JESD-609 Kodu

e3

Tepe Reflow Sıcaklığı (°C)

260

Pulsed Drain Currentmax Idm

12 A

Transistor Application

SWITCHING

Yayın Yılı

2005

Threshold Voltage

-1.3V

Montaj

Surface Mount

Terminal Formu

GULL WING

Number Of Elements

1

Kurşunsuz Kodu

Yes

Power Dissipation

1.25W

Çap

33 mm

Mounting Hole Size

24 mm

Operating Mode

ENHANCEMENT MODE

Ds Breakdown Voltagemin

30 V

Operating Temperaturemax

150 °C

Reach Svhc

No SVHC

RoHS Durumu

ROHS3 Compliant

Presence And Type Of Backlight

LED 12 V

Package Style

SMALL OUTLINE

Drive Voltage Max Rds On Min Rds On

4.5V 10V