IRLML6346TRPBF

Specifications

Package Description

SMALL OUTLINE, R-PDSO-G3

Configuration

SINGLE WITH BUILT-IN DIODE

Drainsource On Resistancemax

0.063 Ω

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fall Time Typ

4.9 ns

Ambalaj

Tape & Reel (TR)

Polaritychannel Type

N-CHANNEL

Çalışma Sıcaklığı

-55°C~150°C TJ

Continuous Drain Current Id

3.4A

Package Shape

RECTANGULAR

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Rise Time

4ns

Pin Sayısı

3

Saturation Current

1

JESD-609 Kodu

e3

Direnç

80MOhm

Threshold Voltage

800mV

Yayın Yılı

2012

Transistor Application

SWITCHING

Pulsed Drain Currentmax Idm

17 A

Tepe Reflow Sıcaklığı (°C)

260

Montaj

Surface Mount

Fabrika Tedarik Süresi

12 Weeks

Fet Type

N-Channel

Manufacturer Package Identifier

Micro3

Power Dissipation

1.3W

Terminal Formu

GULL WING

Number Of Elements

1

Kurşunsuz Kodu

Yes

Yükseklik

1.12mm

Drive Voltage Max Rds On Min Rds On

2.5V 4.5V

Turn Off Delay Time

12 ns

Kurşunsuz

Lead Free

Drain To Source Breakdown Voltage

30V

Operating Temperaturemax

150 °C

Ds Breakdown Voltagemin

30 V

Operating Mode

ENHANCEMENT MODE

Reach Svhc

No SVHC

Max Junction Temperature Tj

150°C

RoHS Durumu

ROHS3 Compliant