IRLML5203GTRPBF

Specifications

Yükseklik

1.12mm

Turn Off Delay Time

88 ns

Drain To Source Breakdown Voltage

-30V

Kurşunsuz

Lead Free

Ds Breakdown Voltagemin

30 V

Operating Mode

ENHANCEMENT MODE

Operating Temperaturemax

175 °C

Max Junction Temperature Tj

150°C

RoHS Durumu

RoHS Compliant

Package Style

SMALL OUTLINE

Power Dissipation

1.25W

Rds On Max

98 mΩ

Terminal Formu

GULL WING

Number Of Elements

1

Kurşunsuz Kodu

Yes

Direnç

98MOhm

JESD-609 Kodu

e3

Transistor Application

SWITCHING

Pulsed Drain Currentmax Idm

24 A

Tepe Reflow Sıcaklığı (°C)

260

Yayın Yılı

2003

Montaj

Surface Mount

Voltage Threshold

-2.5V

Fabrika Tedarik Süresi

10 Weeks

Drain Currentmax Abs Id

3A

Package Description

SMALL OUTLINE, R-PDSO-G3

Configuration

SINGLE WITH BUILT-IN DIODE

Drainsource On Resistancemax

0.098 Ω

Polaritychannel Type

P-CHANNEL

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fall Time Typ

16 ns

Continuous Drain Current Id

-3A

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Package Shape

RECTANGULAR

Radyasyon Dayanımı

No

Maks. Çalışma Sıcaklığı

150°C

Rise Time

8.2ns

Pin Sayısı

3

Saturation Current

1

Capacitance Input

510pF