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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Element Material
- SILICON
- Max Collector Current
- 22A
- Gate Charge
- 38 nC
- Collectoremitter Breakdown Voltage
- 600V
- Kılıf / Paket
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Td Onoff25c
- 30ns/230ns
- Vceon Max Vge Ic
- 2.2V @ 15V, 10A
- Current Collector Pulsed Icm
- 44 A
- ECCN Kodu
- EAR99
- Turn On Time
- 50 ns
- Collectoremitter Saturation Voltage
- 1.8V
- JESD-609 Kodu
- e3
- Switching Energy
- 140µJ (on), 250µJ (off)
- Case Connection
- COLLECTOR
- Temel Parça No
- IRGS10B60KDPBF
- Montaj Tipi
- Surface Mount
- Terminal Kaplaması
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Igbt Type
- NPT
- Reverse Recovery Time
- 90 ns
- Power Dissipation
- 156W
- Currentcollector Ic Max
- 35 A
- Akım Değeri
- 22A
- Voltage Collector Emitter Breakdown Max
- 600 V
- Turn Off Timenom Toff
- 276 ns
- Genişlik
- 9.652mm
- Number Of Elements
- 1
- Tedarikçi Cihaz Paketi
- D2PAK
- Giriş Tipi
- Standard
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Polaritychannel Type
- N-CHANNEL
- Rise Time
- 20ns
- Terminal Sayısı
- 2
- Gateemitter Thr Voltagemax
- 5.5V
- Paket
- Bulk
- Radyasyon Dayanımı
- No
- Max Power Dissipation
- 156W
- Test Conditions
- 400V, 10A, 47Ohm, 15V
- Yayın Yılı
- 2012
- Montaj
- Surface Mount
- Fabrika Tedarik Süresi
- 13 Weeks
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