IRFI530NPBF

Specifications

Fabrika Tedarik Süresi

12 Weeks

Input Capacitance Ciss Max Vds

640pF @ 25V

Number Of Terminals

3

Additional Feature

AVALANCHE RATED

Drive Voltage Max Rds On Min Rds On

10V

Case Connection

ISOLATED

Reach Svhc

No SVHC

Pulsed Drain Currentmax Idm

60 A

Continuous Drain Current Id

12A

Yükseklik

9.8mm

Drainsource On Resistancemax

0.11 Ω

Rise Time

27ns

Çalışma Sıcaklığı

-55°C~175°C TJ

Gate To Source Voltage Vgs

20V

Package Description

LEAD FREE, PLASTIC, TO-220, FULL PACK-3

Montaj

Through Hole

Power Dissipation Max

41W Tc

Terminal Sayısı

3

Element Configuration

Single

Voltage Rated Dc

100V

Package Style

FLANGE MOUNT

Fall Time Typ

25 ns

JESD-609 Kodu

e3

Transistor Element Material

SILICON

Threshold Voltage

4V

Kurşunsuz Kodu

Yes

Part Package Code

TO-220AB

Power Dissipation

33W

Genişlik

4.826mm

Seri

HEXFET®

Pin Sayısı

3

Yüzey Montaj

NO

Pin Sayısı

3

Terminal Kaplaması

MATTE TIN OVER NICKEL

Operating Mode

ENHANCEMENT MODE

Akım Değeri

11A

ECCN Kodu

EAR99

Terminal Formu

THROUGH-HOLE

Isolation Voltage

2.5kV

Rds On Max Id Vgs

110m Ω @ 6.6A, 10V