IRFH8324TRPBF

Specifications

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Case Connection

DRAIN

Additional Feature

HIGH RELIABILITY

Number Of Terminals

5

Input Capacitance Ciss Max Vds

2380pF @ 10V

Fabrika Tedarik Süresi

12 Weeks

Pulsed Drain Currentmax Idm

200 A

Reach Svhc

No SVHC

Power Dissipation Max

3.6W Ta 54W Tc

Terminal Sayısı

5

Montaj

Surface Mount

Package Description

SMALL OUTLINE, R-PDSO-F5

Gate To Source Voltage Vgs

20V

Rise Time

26ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Drainsource On Resistancemax

0.0041 Ω

Continuous Drain Current Id

23A

Fall Time Typ

8.5 ns

Package Style

SMALL OUTLINE

Part Package Code

QFN

Kurşunsuz Kodu

Yes

Transistor Element Material

SILICON

JESD-609 Kodu

e3

Yüzey Montaj

YES

Pin Sayısı

8

Seri

HEXFET®

Power Dissipation

3.6W

Terminal Formu

FLAT

ECCN Kodu

EAR99

Operating Mode

ENHANCEMENT MODE

Terminal Kaplaması

MATTE TIN

Pin Sayısı

8

Current Continuous Drain Id25

23A Ta 90A Tc

RoHS Durumu

ROHS3 Compliant

Radyasyon Dayanımı

No

Rds On Max Id Vgs

4.1m Ω @ 20A, 10V

Drain To Source Breakdown Voltage

30V

Terminal Pozisyonu

DUAL

Power Dissipationmax Abs

54 W

Fet Technology

METAL-OXIDE SEMICONDUCTOR