IRFH5250TRPBF

Specifications

Drain To Source Breakdown Voltage

25V

Rds On Max Id Vgs

1.15m Ω @ 50A, 10V

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

45A Ta 100A Tc

Pin Sayısı

8

Terminal Kaplaması

MATTE TIN

ECCN Kodu

EAR99

Terminal Formu

NO LEAD

Operating Mode

ENHANCEMENT MODE

Seri

HEXFET®

Pin Sayısı

8

Power Dissipation

3.6W

Genişlik

5mm

Yüzey Montaj

YES

Transistor Element Material

SILICON

JESD-609 Kodu

e3

Part Package Code

QFN

Threshold Voltage

1.8V

Kurşunsuz Kodu

Yes

Package Style

SMALL OUTLINE

Fall Time Typ

19 ns

Drainsource On Resistancemax

0.00175 Ω

Rise Time

46ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Tepe Reflow Sıcaklığı (°C)

260

Continuous Drain Current Id

100A

Yükseklik

838.2μm

Montaj

Surface Mount

Tepe Reflow Süresi (maks. sn)

30

Terminal Sayısı

5

Power Dissipation Max

3.6W Ta 160W Tc

Gate To Source Voltage Vgs

20V

Package Description

6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8

Pulsed Drain Currentmax Idm

400 A

Reach Svhc

No SVHC

Number Of Terminals

5

Input Capacitance Ciss Max Vds

7174pF @ 13V

Fabrika Tedarik Süresi

19 Weeks

Additional Feature

HIGH RELIABILITY

Case Connection

DRAIN