IRFH5015TRPBF

Specifications

Nominal Power Dissipation

2 (at T = 70°C) - 1000 hours W

Current Continuous Drain Id25

10A Ta 56A Tc

RoHS Durumu

ROHS3 Compliant

Radyasyon Dayanımı

No

Rds On Max Id Vgs

31m Ω @ 34A, 10V

Max Junction Temperature Tj

150°C

Drain To Source Breakdown Voltage

150V

Terminal Formu

NO LEAD

ECCN Kodu

EAR99

Operating Mode

ENHANCEMENT MODE

Terminal Kaplaması

Matte Tin (Sn)

Pin Sayısı

8

Yüzey Montaj

YES

Pin Sayısı

8

Permissible Deviation

± 5 %

Seri

HEXFET®

Wear Resistance

1000 cycles

Genişlik

5.15mm

Power Dissipation

3.6W

Part Package Code

QFN

Kurşunsuz Kodu

Yes

Threshold Voltage

5V

Transistor Element Material

SILICON

JESD-609 Kodu

e3

Fall Time Typ

3.4 ns

Package Style

SMALL OUTLINE

Terminal Sayısı

5

Power Dissipation Max

3.6W Ta 156W Tc

Number Of Channels

1

Montaj

Surface Mount

Tepe Reflow Süresi (maks. sn)

30

Package Description

SMALL OUTLINE, R-PDSO-N5

Gate To Source Voltage Vgs

20V

Rise Time

9.7ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Drainsource On Resistancemax

0.031 Ω

Yükseklik

900μm

Continuous Drain Current Id

56A

Tepe Reflow Sıcaklığı (°C)

260

Pulsed Drain Currentmax Idm

220 A