IRFB5615PBF

Specifications

Thread

M4

Vgsth Max Id

5V @ 100μA

Tip

polyamide nut DIN 555 series

Terminal Pozisyonu

SINGLE

Ambalaj

Tube

Number Of Elements

1

REACH Uyumluluk Kodu

compliant

Rohs Code

Yes

Jesd30 Code

R-PSFM-T3

Drain To Source Breakdown Voltage

150V

Direnç

39MOhm

Turn Off Delay Time

17.1 ns

Gate Charge Qg Max Vgs

40nC @ 10V

Number Of Terminals

3

Kılıf / Paket

TO-220-3

Tepe Reflow Süresi (maks. sn)

30

Pin Sayısı

3

Pulsed Drain Currentmax Idm

140 A

Package Shape

RECTANGULAR

Polaritychannel Type

N-CHANNEL

Transistor Application

AMPLIFIER

Current Continuous Drain Id25

35A Tc

Rds On Max Id Vgs

39m Ω @ 21A, 10V

Qualification Status

Not Qualified

Ds Breakdown Voltagemin

150 V

Package Body Material

PLASTIC/EPOXY

Fall Time Typ

13.2 ns

Fabrika Tedarik Süresi

12 Weeks

Jedec95 Code

TO-220AB

ECCN Kodu

EAR99

Tepe Reflow Sıcaklığı (°C)

250

Genişlik

4.826mm

Drainsource On Resistancemax

0.039 Ω

Kurşunsuz

Lead Free

Configuration

SINGLE WITH BUILT-IN DIODE

Montaj Tipi

Through Hole

Fet Type

N-Channel

Vgs Max

±20V

Transistor Element Material

SILICON

Parça Durumu

Active