IRFB4020PBF

Specifications

Transistor Element Material

SILICON

Parça Durumu

Active

Vgs Max

±20V

Fet Type

N-Channel

Montaj Tipi

Through Hole

Configuration

SINGLE WITH BUILT-IN DIODE

Drainsource On Resistancemax

0.1 Ω

Genişlik

4.82mm

Kurşunsuz

Lead Free

Jedec95 Code

TO-220AB

ECCN Kodu

EAR99

Fabrika Tedarik Süresi

12 Weeks

Fall Time Typ

6.3 ns

Ds Breakdown Voltagemin

200 V

Qualification Status

Not Qualified

Package Body Material

PLASTIC/EPOXY

Transistor Application

AMPLIFIER

Current Continuous Drain Id25

18A Tc

Rds On Max Id Vgs

100m Ω @ 11A, 10V

Pulsed Drain Currentmax Idm

52 A

Package Shape

RECTANGULAR

Polaritychannel Type

N-CHANNEL

Pin Sayısı

3

Radyasyon Dayanımı

No

Terminal

Through Hole

Number Of Terminals

3

Kılıf / Paket

TO-220-3

Turn Off Delay Time

16 ns

Gate Charge Qg Max Vgs

29nC @ 10V

Drain To Source Breakdown Voltage

200V

Direnç

100MOhm

REACH Uyumluluk Kodu

compliant

Rohs Code

Yes

Jesd30 Code

R-PSFM-T3

Terminal Pozisyonu

SINGLE

Ambalaj

Tube

Number Of Elements

1

Vgsth Max Id

4.9V @ 100μA

Yüzey Montaj

NO

Uzunluk

10.6426mm