IRFB3207PBF

Specifications

Configuration

SINGLE WITH BUILT-IN DIODE

Kurşunsuz

Lead Free

Genişlik

4.826mm

Drainsource On Resistancemax

0.0045 Ω

ECCN Kodu

EAR99

Jedec95 Code

TO-220AB

Conform To The Norm

AEC Q200

Fabrika Tedarik Süresi

12 Weeks

Fall Time Typ

74 ns

Parça Durumu

Active

Transistor Element Material

SILICON

Operating Voltage

50V

Vgs Max

±20V

Fet Type

N-Channel

Montaj Tipi

Through Hole

Kılıf / Paket

TO-220-3

Number Of Terminals

3

Gate Charge Qg Max Vgs

260nC @ 10V

Turn Off Delay Time

68 ns

Drain To Source Breakdown Voltage

75V

Jesd30 Code

R-PSFM-T3

Rohs Code

Yes

REACH Uyumluluk Kodu

compliant

Number Of Elements

1

Ambalaj

Tube

Terminal Pozisyonu

SINGLE

Seri

HEXFET®

Vgsth Max Id

4V @ 250μA

Ds Breakdown Voltagemin

75 V

Qualification Status

Not Qualified

Package Body Material

PLASTIC/EPOXY

Current Continuous Drain Id25

170A Tc

Rds On Max Id Vgs

4.5m Ω @ 75A, 10V

Transistor Application

SWITCHING

Package Shape

RECTANGULAR

Polaritychannel Type

N-CHANNEL

Pulsed Drain Currentmax Idm

720 A

Dielektrik

X7R

Pin Sayısı

3

Radyasyon Dayanımı

No