IRF9956TRPBF

Specifications

Max Power Dissipation

2W

Montaj Tipi

Surface Mount

Fet Type

2 N-Channel (Dual)

Operating Voltage

100V

Transistor Element Material

SILICON

Parça Durumu

Active

Fall Time Typ

3 ns

Fabrika Tedarik Süresi

12 Weeks

Jedec95 Code

MS-012AA

ECCN Kodu

EAR99

Tepe Reflow Sıcaklığı (°C)

260

Kurşunsuz

Contains Lead, Lead Free

Drainsource On Resistancemax

0.1 Ω

Genişlik

3.9878mm

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Temel Parça No

IRF9956PBF

Capacitors Series

KGM

Tepe Reflow Süresi (maks. sn)

30

Radyasyon Dayanımı

No

Dielektrik

X7R

Pulsed Drain Currentmax Idm

16 A

Polaritychannel Type

N-CHANNEL

Package Shape

RECTANGULAR

Transistor Application

SWITCHING

Rds On Max Id Vgs

100m Ω @ 2.2A, 10V

Ds Breakdown Voltagemin

30 V

Qualification Status

Not Qualified

Package Body Material

PLASTIC/EPOXY

Vgsth Max Id

1V @ 250μA

Seri

HEXFET®

Terminal Pozisyonu

DUAL

Ambalaj

Tape & Reel (TR)

Number Of Elements

2

REACH Uyumluluk Kodu

compliant

Rohs Code

Yes

Jesd30 Code

R-PDSO-G8

Drain To Source Breakdown Voltage

30V

Turn Off Delay Time

13 ns

Gate Charge Qg Max Vgs

14nC @ 10V

Saturation Current

1