IRF9530NPBF

Specifications

Parça Durumu

Active

Transistor Element Material

SILICON

Vgs Max

±20V

Montaj Tipi

Through Hole

Fet Type

P-Channel

Configuration

SINGLE WITH BUILT-IN DIODE

ECCN Kodu

EAR99

Jedec95 Code

TO-220AB

Kurşunsuz

Lead Free

Drainsource On Resistancemax

0.2 Ω

Genişlik

4.69mm

Tepe Reflow Sıcaklığı (°C)

250

HTS Kodu

8541.29.00.95

Fabrika Tedarik Süresi

12 Weeks

Fall Time Typ

46 ns

Rds On Max Id Vgs

200m Ω @ 8.4A, 10V

Current Continuous Drain Id25

14A Tc

Transistor Application

SWITCHING

Package Body Material

PLASTIC/EPOXY

Qualification Status

Not Qualified

Ds Breakdown Voltagemin

100 V

Pin Sayısı

3

Polaritychannel Type

P-CHANNEL

Package Shape

RECTANGULAR

Pulsed Drain Currentmax Idm

56 A

Power Dissipation Ambientmax

75 W

Tepe Reflow Süresi (maks. sn)

30

Radyasyon Dayanımı

No

Contact Plating

Tin

Terminal

Through Hole

Kılıf / Paket

TO-220-3

Number Of Terminals

3

Direnç

200mOhm

Drain To Source Breakdown Voltage

-100V

Gate Charge Qg Max Vgs

58nC @ 10V

Turn Off Delay Time

45 ns

Terminal Pozisyonu

SINGLE

Ambalaj

Tube

Number Of Elements

1

Jesd30 Code

R-PSFM-T3