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Priced by quantity and lead time.
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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Parça Durumu
- Last Time Buy
- Transistor Element Material
- SILICON
- Max Power Dissipation
- 2.1W
- Montaj Tipi
- Surface Mount
- Fet Type
- 2 P-Channel (Dual)
- ECCN Kodu
- EAR99
- Drainsource On Resistancemax
- 0.007Ohm
- Fall Time Typ
- 121 ns
- Fabrika Tedarik Süresi
- 17 Weeks
- Rds On Max Id Vgs
- 7mOhm @ 14A, 10V
- Current Continuous Drain Id25
- 14A (Ta), 75A (Tc)
- Transistor Application
- SWITCHING
- Paket
- Bulk
- Radyasyon Dayanımı
- No
- Drain To Source Breakdown Voltage
- -30V
- Turn Off Delay Time
- 76 ns
- Gate Charge Qg Max Vgs
- 64nC @ 4.5V
- Kılıf / Paket
- DirectFET™ Isometric MC
- Vgsth Max Id
- 2.4V @ 50µA
- Seri
- DirectFET™
- Number Of Elements
- 1
- Ambalaj
- Tape & Reel (TR)
- Terminal Pozisyonu
- BOTTOM
- Jesd30 Code
- R-XBCC-N6
- Element Configuration
- Dual
- Turn On Delay Time
- 19 ns
- Case Connection
- DRAIN
- Power Dissipation
- 2.1W
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Ürün Durumu
- Active
- Fet Feature
- Standard
- Power Max
- 2.1W (Ta), 57W (Tc)
- Operating Mode
- ENHANCEMENT MODE
- Pin Sayısı
- 10
- Continuous Drain Current Id
- 14A
- Tedarikçi Cihaz Paketi
- DirectFET™ Isometric MC
- Montaj
- Surface Mount
- Rise Time
- 142ns
- Drain Currentmax Abs Id
- 75A
- Gate To Source Voltage Vgs
- 20V
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