IRF7807D1TRPBF

Specifications

Ambalaj

Tape & Reel (TR)

Terminal Pozisyonu

DUAL

Jesd30 Code

R-PDSO-G8

REACH Uyumluluk Kodu

compliant

Rohs Code

Yes

Vgsth Max Id

1V @ 250μA

Seri

FETKY™

Saturation Current

1

Number Of Terminals

8

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Drain To Source Breakdown Voltage

30V

Gate Charge Qg Max Vgs

17nC @ 5V

Tepe Reflow Süresi (maks. sn)

30

Radyasyon Dayanımı

No

Current Continuous Drain Id25

8.3A Ta

Rds On Max Id Vgs

25m Ω @ 7A, 4.5V

Transistor Application

SWITCHING

Ds Breakdown Voltagemin

30 V

Qualification Status

Not Qualified

Package Body Material

PLASTIC/EPOXY

Pin Sayısı

8

Package Shape

RECTANGULAR

Polaritychannel Type

N-CHANNEL

Pulsed Drain Currentmax Idm

66 A

Configuration

SINGLE WITH BUILT-IN DIODE

ECCN Kodu

EAR99

Jedec95 Code

MS-012AA

Drainsource On Resistancemax

0.025 Ω

Genişlik

3.9878mm

Kurşunsuz

Lead Free

Tepe Reflow Sıcaklığı (°C)

260

Montaj Tipi

Surface Mount

Fet Type

N-Channel

Parça Durumu

Obsolete

Transistor Element Material

SILICON

Vgs Max

±12V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

2.5W Ta

JESD-609 Kodu

e3

Akım Değeri

8.3A