IRF7343TRPBF

Specifications

Contact Plating

Tin

Operating Temperaturemax

150 °C

Ambalaj

Tape & Reel (TR)

Part Life Cycle Code

Transferred

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Threshold Voltage

1V

Rds On Max Id Vgs

50m Ω @ 4.7A, 10V

Input Capacitance Ciss Max Vds

740pF @ 25V

Yükseklik

1.75mm

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Akım Değeri

4.7A

Jesd30 Code

R-PDSO-G8

Operating Mode

ENHANCEMENT MODE

Saturation Current

1

Direnç

50mOhm

Pin Sayısı

8

Radyasyon Dayanımı

No

Ds Breakdown Voltagemin

55 V

Max Junction Temperature Tj

150°C

Çalışma Sıcaklığı

-55°C~150°C TJ

Rise Time

10ns

Drain Currentmax Id

4.7 A

Rohs Code

Yes

Power Dissipation

2W

Package Shape

RECTANGULAR

Terminal Formu

GULL WING

Kurşunsuz

Lead Free

Temel Parça No

IRF7343PBF

Power Dissipationmax Abs

2 W

Additional Feature

HIGH RELIABILITY

Number Of Channels

2

Yüzey Montaj

YES

Vgsth Max Id

1V @ 250μA

Qualification Status

Not Qualified

Tepe Reflow Sıcaklığı (°C)

260

Max Power Dissipation

2W

Fall Time Typ

22 ns

Tepe Reflow Süresi (maks. sn)

30

Uzunluk

4.9784mm