IRF7313TRPBF

Specifications

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Part Life Cycle Code

Transferred

Ambalaj

Tape & Reel (TR)

Operating Temperaturemax

150 °C

Contact Plating

Tin

Yükseklik

1.75mm

Element Configuration

Dual

Input Capacitance Ciss Max Vds

650pF @ 25V

Rds On Max Id Vgs

29m Ω @ 5.8A, 10V

Threshold Voltage

1V

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Operating Mode

ENHANCEMENT MODE

Jesd30 Code

R-PDSO-G8

Akım Değeri

6.5A

Ds Breakdown Voltagemin

30 V

Radyasyon Dayanımı

No

Pin Sayısı

8

Direnç

29mOhm

Saturation Current

1

Package Shape

RECTANGULAR

Power Dissipation

2W

Drain Currentmax Id

6.5 A

Rohs Code

Yes

Rise Time

8.9ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Dual Supply Voltage

30V

Max Junction Temperature Tj

150°C

Power Dissipation Ambientmax

2 W

Power Dissipationmax Abs

2 W

Temel Parça No

IRF7313PBF

Kurşunsuz

Lead Free

Terminal Formu

GULL WING

Max Power Dissipation

2W

Vgsth Max Id

1V @ 250μA

Qualification Status

Not Qualified

Tepe Reflow Sıcaklığı (°C)

260

Yüzey Montaj

YES

Number Of Channels

2

Additional Feature

HIGH RELIABILITY, AVALANCHE RATED