IRF7303PBF

Specifications

Part Life Cycle Code

Transferred

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Ambalaj

Tube

Part Package Code

SOIC

Operating Temperaturemax

150 °C

Input Capacitance Ciss Max Vds

520pF @ 25V

Rds On Max Id Vgs

50m Ω @ 2.4A, 10V

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Operating Mode

ENHANCEMENT MODE

Jesd30 Code

R-PDSO-G8

Ds Breakdown Voltagemin

30 V

Saturation Current

1

Package Shape

RECTANGULAR

Rohs Code

Yes

Drain Currentmax Id

4.9 A

Çalışma Sıcaklığı

-55°C~150°C TJ

Drain Currentmax Abs Id

4.9A

Power Dissipationmax Abs

1.4 W

Terminal Formu

GULL WING

Temel Parça No

IRF7303PBF

Tepe Reflow Sıcaklığı (°C)

260

Qualification Status

Not Qualified

Vgsth Max Id

1V @ 250μA

Yüzey Montaj

YES

Additional Feature

LOGIC LEVEL COMPATIBLE

Kurşunsuz Kodu

Yes

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Süresi (maks. sn)

30

REACH Uyumluluk Kodu

unknown

Seri

HEXFET®

Jedec95 Code

MS-012AA

Package Style

SMALL OUTLINE

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Fabrika Tedarik Süresi

22 Weeks

Gate Charge Qg Max Vgs

25nC @ 10V

Drainsource On Resistancemax

0.05 Ω

Number Of Elements

2

Yayın Yılı

1997