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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Drainsource On Resistancemax
- 0.06 Ω
- Turn Off Delay Time
- 100 ns
- Gate Charge Qg Max Vgs
- 25nC @ 10V
- Voltage Rated Dc
- -20V
- Yayın Yılı
- 1997
- Terminal Kaplaması
- MATTE TIN
- Montaj
- Surface Mount
- RoHS Durumu
- ROHS3 Compliant
- Drain To Source Voltage Vdss
- 20V
- Number Of Elements
- 1
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Drain To Source Breakdown Voltage
- -20V
- Fall Time Typ
- 68 ns
- Tepe Reflow Süresi (maks. sn)
- 30
- Uzunluk
- 4.9784mm
- Kurşunsuz Kodu
- Yes
- Package Style
- SMALL OUTLINE
- Reach Svhc
- No SVHC
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Fabrika Tedarik Süresi
- 12 Weeks
- REACH Uyumluluk Kodu
- compliant
- Seri
- HEXFET®
- HTS Kodu
- 8541.29.00.95
- Nominal Vgs
- -2.5 V
- Terminal Pozisyonu
- DUAL
- Montaj Tipi
- Surface Mount
- Genişlik
- 3.9878mm
- Exterior Housing Material
- 1
- Polaritychannel Type
- P-CHANNEL
- JESD-609 Kodu
- e3
- Turn On Delay Time
- 14 ns
- Recovery Time
- 100 ns
- Transistor Application
- SWITCHING
- Terminal Sayısı
- 8
- Current Continuous Drain Id25
- 5.3A Ta
- Fet Type
- P-Channel
- Parça Durumu
- Active
- Continuous Drain Current Id
- -5.3A
- Gate To Source Voltage Vgs
- 12V
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