IRF6691PBF

Specifications

Additional Feature

LOW CONDUCTION LOSS

Operating Mode

ENHANCEMENT MODE

Qualification Status

Not Qualified

Drain Currentmax Id

32 A

Drainsource On Resistancemax

0.0018 Ω

Tepe Reflow Sıcaklığı (°C)

260

Ds Breakdown Voltagemin

20 V

Package Description

ROHS COMPLIANT, ISOMETRIC-3

Number Of Terminals

3

Package Shape

RECTANGULAR

Pulsed Drain Currentmax Idm

260 A

Kurşunsuz Kodu

Yes

Package Style

CHIP CARRIER

Terminal Kaplaması

SILVER NICKEL

Case Connection

DRAIN

Polaritychannel Type

N-CHANNEL

Moisture Sensitivity Levels

3

Yüzey Montaj

YES

REACH Uyumluluk Kodu

unknown

JESD-609 Kodu

e4

Configuration

SINGLE WITH BUILT-IN DIODE

Terminal Pozisyonu

BOTTOM

Avalanche Energy Rating Eas

230 mJ

Part Life Cycle Code

Transferred

Rohs Code

Yes

Terminal Formu

NO LEAD

Number Of Elements

1

Tepe Reflow Süresi (maks. sn)

30

ECCN Kodu

EAR99

Transistor Application

SWITCHING

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Jesd30 Code

R-XBCC-N3

Package Body Material

UNSPECIFIED

Ihs Manufacturer

INTERNATIONAL RECTIFIER CORP

Operating Temperaturemax

150 °C

Pin Sayısı

3

Transistor Element Material

SILICON