IRF630NPBF

Specifications

Package Body Material

PLASTIC/EPOXY

Jedec95 Code

TO-220AB

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Power Dissipationmax Abs

82 W

Operating Temperaturemax

150 °C

Pin Sayısı

3

Gross Weight

1.05 g

Max Forward Voltage

1.25V

Terminal Pozisyonu

SINGLE

Type Of Diode

rectifying

Case

DO201AD

Avalanche Energy Rating Eas

94 mJ

Tepe Reflow Süresi (maks. sn)

30

Package Description

LEAD FREE, PLASTIC PACKAGE-3

Max Offstate Voltage

0.4kV

Number Of Terminals

3

Pulsed Drain Currentmax Idm

37 A

Package Style

FLANGE MOUNT

Semiconductor Structure

single diode

Polaritychannel Type

N-CHANNEL

Yüzey Montaj

NO

Operating Mode

ENHANCEMENT MODE

Features Of Semiconductor Devices

fast switching

Drainsource On Resistancemax

0.3 Ω

Leakage Current

20µA

Drain Currentmax Id

9.3 A

ECCN Kodu

EAR99

Part Package Code

TO-220AB

Exterior Housing Material

1

Transistor Application

SWITCHING

Max Forward Impulse Current

60A

Jesd30 Code

R-PSFM-T3

Ihs Manufacturer

INTERNATIONAL RECTIFIER CORP

Transistor Element Material

SILICON

JESD-609 Kodu

e3

REACH Uyumluluk Kodu

compliant

Configuration

SINGLE WITH BUILT-IN DIODE

Part Life Cycle Code

Transferred

Terminal Formu

THROUGH-HOLE

Rohs Code

Yes