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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Tepe Reflow Süresi (maks. sn)
- 30
- Pin Sayısı
- 3
- Current Continuous Drain Id25
- 31A Tc
- Recovery Time
- 110 ns
- Max Junction Temperature Tj
- 175°C
- Montaj Tipi
- Through Hole
- Montaj
- Through Hole
- Avalanche Energy Rating Eas
- 280 mJ
- Vgsth Max Id
- 4V @ 250μA
- Ambalaj
- Tube
- Terminal Pozisyonu
- SINGLE
- Power Dissipation
- 110W
- Drain To Source Breakdown Voltage
- -55V
- Terminal
- Through Hole
- Seri
- HEXFET®
- HTS Kodu
- 8541.29.00.95
- RoHS Durumu
- ROHS3 Compliant
- Kurşunsuz
- Contains Lead, Lead Free
- Parça Durumu
- Active
- Operating Temperaturemax
- 175 °C
- Pin Sayısı
- 3
- Number Of Channels
- 1
- Power Dissipation Max
- 110W Tc
- Direnç
- 60mOhm
- Power Dissipationmax Abs
- 110 W
- Voltage Rated Dc
- -55V
- Package Body Material
- PLASTIC/EPOXY
- Radyasyon Dayanımı
- No
- Jedec95 Code
- TO-220AB
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Rise Time
- 66ns
- Contact Plating
- Tin
- Yükseklik
- 19.3mm
- Drainsource On Resistancemax
- 0.06 Ω
- Drain Currentmax Id
- 31 A
- Drain To Source Voltage Vdss
- 55V
- Operating Mode
- ENHANCEMENT MODE
- Element Configuration
- Single
- Reach Svhc
- No SVHC
- Gate To Source Voltage Vgs
- 20V
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