IRF2807PBF

Specifications

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drain To Source Breakdown Voltage

75V

Drain Currentmax Abs Id

75A

Power Dissipation Max

230W Tc

Parça Durumu

Active

Drain Currentmax Id

75 A

Direnç

13mOhm

Terminal Sayısı

3

Tepe Reflow Sıcaklığı (°C)

250

Vgsth Max Id

4V @ 250μA

Yayın Yılı

2001

Ambalaj

Tube

RoHS Durumu

ROHS3 Compliant

Kurşunsuz

Contains Lead, Lead Free

Gate To Source Voltage Vgs

20V

Input Capacitance Ciss Max Vds

3820pF @ 25V

Rohs Code

Yes

Case Connection

DRAIN

Terminal

Through Hole

Lead Pitch

2.54mm

Avalanche Energy Rating Eas

340 mJ

Exterior Housing Material

1

Tepe Reflow Süresi (maks. sn)

30

Element Configuration

Single

Power Dissipation

230W

Part Package Code

TO-220AB

Threshold Voltage

4V

Pin Sayısı

3

REACH Uyumluluk Kodu

compliant

Montaj Tipi

Through Hole

Seri

HEXFET®

Drainsource On Resistancemax

0.013 Ω

Package Body Material

PLASTIC/EPOXY

Package Style

FLANGE MOUNT

Operating Temperaturemax

175 °C

Ds Breakdown Voltagemin

75 V

Transistor Element Material

SILICON

Polaritychannel Type

N-CHANNEL

Continuous Drain Current Id

82A

Rise Time

64ns