IRF2805PBF

Specifications

Rohs Code

Yes

Input Capacitance Ciss Max Vds

5110pF @ 25V

Gate To Source Voltage Vgs

20V

RoHS Durumu

ROHS3 Compliant

Kurşunsuz

Lead Free

Ambalaj

Tube

Transport Packaging Sizequantity

28.5*21*19/1500

Vgsth Max Id

4V @ 250μA

Yayın Yılı

2002

Terminal Sayısı

3

Drain Currentmax Id

75 A

Direnç

4.7Ohm

Parça Durumu

Active

Rated Voltage

250 V

Drain To Source Breakdown Voltage

55V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

330W Tc

Polaritychannel Type

N-CHANNEL

Transistor Element Material

SILICON

Package Style

FLANGE MOUNT

Operating Temperaturemax

175 °C

Ds Breakdown Voltagemin

55 V

Package Body Material

PLASTIC/EPOXY

Drainsource On Resistancemax

0.0047 Ω

Seri

HEXFET®

Montaj Tipi

Through Hole

Pin Sayısı

3

REACH Uyumluluk Kodu

compliant

Type Of Fuse

Fuse link in SMD case 2410

Threshold Voltage

4V

Gross Weight

0.19

Part Package Code

TO-220AB

Element Configuration

Single

Power Dissipation

330W

Avalanche Energy Rating Eas

1220 mJ

Exterior Housing Material

1

Case Connection

DRAIN

Mounting Method

SMD

Radyasyon Dayanımı

No

Recovery Time

120 ns