IRF1407PBF

Specifications

Input Capacitance Ciss Max Vds

5600pF @ 25V

Gate To Source Voltage Vgs

20V

Rohs Code

Yes

Rds On Max

7.8 mΩ

Yayın Yılı

2001

Vgsth Max Id

4V @ 250μA

RoHS Durumu

ROHS3 Compliant

Kurşunsuz

Lead Free

Type Of Adapter For Programmers

extension module

Ambalaj

Tube

Direnç

7.8Ohm

Drain Currentmax Id

130 A

Parça Durumu

Active

Tedarikçi Cihaz Paketi

TO-220AB

Drain To Source Voltage Vdss

75V

Drain To Source Breakdown Voltage

75V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

330W Tc

Package Style

FLANGE MOUNT

Ds Breakdown Voltagemin

75 V

Operating Temperaturemax

175 °C

Polaritychannel Type

N-CHANNEL

Transistor Element Material

SILICON

Pin Sayısı

3

REACH Uyumluluk Kodu

compliant

Maks. Çalışma Sıcaklığı

175°C

Threshold Voltage

4V

Drainsource On Resistancemax

0.0078 Ω

Package Body Material

PLASTIC/EPOXY

Seri

HEXFET®

Montaj Tipi

Through Hole

Element Configuration

Single

Power Dissipation

330W

Avalanche Energy Rating Eas

390 mJ

Exterior Housing Material

1

Gross Weight

21.39 g

Part Package Code

TO-220AB

Case Connection

DRAIN

Operating Mode

ENHANCEMENT MODE

Gate Charge Qg Max Vgs

250nC @ 10V