IRF1324PBF

Specifications

REACH Uyumluluk Kodu

compliant

Pin Sayısı

3

Threshold Voltage

4V

Drainsource On Resistancemax

0.0015 Ω

Package Body Material

PLASTIC/EPOXY

Seri

HEXFET®

Montaj Tipi

Through Hole

Operating Temperaturemax

175 °C

Ds Breakdown Voltagemin

24 V

Package Style

FLANGE MOUNT

Polaritychannel Type

N-CHANNEL

Transistor Element Material

SILICON

Power Dissipation

300W

Element Configuration

Single

Exterior Housing Material

1

Avalanche Energy Rating Eas

270 mJ

Terminal

Through Hole

Part Package Code

TO-220AB

Yayın Yılı

2008

Vgsth Max Id

4V @ 250μA

Kurşunsuz

Lead Free

RoHS Durumu

ROHS3 Compliant

Ambalaj

Tube

Input Capacitance Ciss Max Vds

7590pF @ 24V

Gate To Source Voltage Vgs

20V

Rohs Code

Yes

Power Dissipation Max

300W Tc

Drain To Source Breakdown Voltage

24V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drain Currentmax Id

195 A

Parça Durumu

Active

Terminal Sayısı

3

Jedec95 Code

TO-220AB

Configuration

SINGLE WITH BUILT-IN DIODE

Terminal Kaplaması

MATTE TIN OVER NICKEL

Yükseklik

9.02mm

Fet Type

N-Channel

Power Dissipationmax Abs

300 W

Pulsed Drain Currentmax Idm

1412 A

Turn On Delay Time

17 ns