PRO X2 612 G2 (1DT66AW) BATTERY

Specifications

Typical Turnon Delay Time

17 ns

Qg Gate Charge

52 nC

Ürün Tipi

MOSFET

Vgs Th Gatesource Threshold Voltage

4 V

Pd Power Dissipation

131 W

Maks. Çalışma Sıcaklığı

+ 150 C

Id Continuous Drain Current

40 A

Typical Turnoff Delay Time

35 ns

Channel Mode

Enhancement

Transistor Type

1 N-Channel

Number Of Channels

1 Channel

RoHS

Details

Paket

Retail Package

Montaj Stili

SMD/SMT

Minimum Operating Temperature

- 55 C

Fabrika Paket Adedi

3000

Vds Drainsource Breakdown Voltage

150 V

Rise Time

100 ns

Vgs Gatesource Voltage

- 20 V, + 20 V

Kılıf / Paket

TO-252AA-3

Configuration

Single

Ürün Durumu

Active

Seri

NFET-150SMN

Birim Ağırlık

0.010476 oz

Ambalaj

Reel

Accessory Type

Replacement Battery

Transistor Polarity

N-Channel

Rds On Drainsource Resistance

35 mOhms

Technology

Si