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Specifications
- RoHS
- Details
- Vds Drainsource Breakdown Voltage
- 20 V
- Paket
- Retail Package
- Accessory Type
- Replacement Battery
- Maks. Çalışma Sıcaklığı
- + 150 C
- Rise Time
- 61 ns
- Kılıf / Paket
- SOT-23-3
- Number Of Channels
- 1 Channel
- Typical Turnon Delay Time
- 5 ns
- Transistor Type
- 1 P-Channel
- Ambalaj
- Reel
- Pd Power Dissipation
- 1.25 W
- Typical Turnoff Delay Time
- 70 ns
- Channel Mode
- Enhancement
- Ürün Tipi
- MOSFET
- Technology
- Si
- Ürün Durumu
- Active
- Birim Ağırlık
- 0.000282 oz
- Qg Gate Charge
- 10 nC
- Fabrika Paket Adedi
- 12000
- Minimum Operating Temperature
- - 55 C
- Vgs Gatesource Voltage
- - 12 V, + 12 V
- Transistor Polarity
- P-Channel
- Vgs Th Gatesource Threshold Voltage
- 1.3 V
- Rds On Drainsource Resistance
- 46 mOhms
- Configuration
- Single
- Id Continuous Drain Current
- 4.5 A
- Montaj Stili
- SMD/SMT
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