IRFBA31N50L

Specifications

Transistor Element Material

SILICON

Yüzey Montaj

NO

Avalanche Energy Rating Eas

760 mJ

Case Connection

DRAIN

Configuration

SINGLE WITH BUILT-IN DIODE

Drain Currentmax Id

31 A

ECCN Kodu

EAR99

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Drainsource On Resistancemax

0.152 Ω

Operating Temperaturemax

150 °C

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Additional Feature

AVALANCHE RATED

Power Dissipationmax Abs

360 W

Transistor Application

SWITCHING

Ds Breakdown Voltagemin

500 V

Package Body Material

PLASTIC/EPOXY

Qualification Status

Not Qualified

Pin Sayısı

4

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

124 A

Package Shape

RECTANGULAR

Polaritychannel Type

N-CHANNEL

Package Description

SUPER-220, 4 PIN

Number Of Terminals

3

Terminal Formu

THROUGH-HOLE

Part Life Cycle Code

Obsolete

Terminal Kaplaması

MATTE TIN OVER NICKEL

JESD-609 Kodu

e3

Terminal Pozisyonu

SINGLE

Number Of Elements

1

REACH Uyumluluk Kodu

unknown

Rohs Code

No

Jesd30 Code

R-PSIP-T3

Package Style

IN-LINE