IQE013N04LM6

Specifications

Drain Currentmax Id

170 A

Package Shape

SQUARE

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Moisture Sensitivity Levels

1

Number Of Terminals

8

Part Life Cycle Code

Active

Reference Standard

IEC-61249-2-21; IEC-68-1

Operating Mode

ENHANCEMENT MODE

Yüzey Montaj

YES

JESD-609 Kodu

e3

Drainsource On Resistancemax

0.0019 Ω

Package Body Material

PLASTIC/EPOXY

ECCN Kodu

EAR99

Number Of Elements

1

Pulsed Drain Currentmax Idm

820 A

REACH Uyumluluk Kodu

unknown

Date Of Intro

2020-07-15

Operating Temperaturemax

175 °C

Polaritychannel Type

N-CHANNEL

Avalanche Energy Rating Eas

255 mJ

Power Dissipationmax Abs

107 W

Case Connection

SOURCE

Jesd30 Code

S-PDSO-N8

Transistor Application

SWITCHING

Package Description

,

Operating Temperaturemin

-55 °C

Terminal Formu

NO LEAD

Terminal Pozisyonu

DUAL

Package Style

SMALL OUTLINE

Terminal Kaplaması

TIN

Configuration

SINGLE WITH BUILT-IN DIODE

Transistor Element Material

SILICON

Feedback Capmax Crss

40 pF

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Ds Breakdown Voltagemin

40 V