Volume pricing
- 1+ pcs$1.86
- 10+ pcs$1.75
- 100+ pcs$1.65
- 500+ pcs$1.56
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Jesd30 Code
- S-PDSO-N8
- Power Dissipationmax Abs
- 89 W
- Case Connection
- SOURCE
- Terminal Formu
- NO LEAD
- Operating Temperaturemin
- -55 °C
- Package Style
- SMALL OUTLINE
- Terminal Pozisyonu
- DUAL
- Terminal Kaplaması
- TIN
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Transistor Element Material
- SILICON
- Ihs Manufacturer
- INFINEON TECHNOLOGIES AG
- Ds Breakdown Voltagemin
- 25 V
- Feedback Capmax Crss
- 195 pF
- Drain Currentmax Id
- 298 A
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Moisture Sensitivity Levels
- 1
- Number Of Terminals
- 8
- Rohs Code
- Yes
- Package Shape
- SQUARE
- Yüzey Montaj
- YES
- JESD-609 Kodu
- e3
- Drainsource On Resistancemax
- 0.0008 Ω
- Package Body Material
- PLASTIC/EPOXY
- Reference Standard
- IEC-61249-2-21; IEC-68-1
- Part Life Cycle Code
- Active
- Operating Mode
- ENHANCEMENT MODE
- Number Of Elements
- 1
- Pulsed Drain Currentmax Idm
- 1192 A
- REACH Uyumluluk Kodu
- unknown
- Date Of Intro
- 2019-12-05
- ECCN Kodu
- EAR99
- Polaritychannel Type
- N-CHANNEL
- Avalanche Energy Rating Eas
- 140 mJ
- Operating Temperaturemax
- 150 °C
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