IMBF170R1K0M1

Specifications

Power Dissipationmax Abs

68 W

Transistor Element Material

SILICON CARBIDE

Terminal Formu

GULL WING

Package Description

,

Saturation Current

1

Drainsource On Resistancemax

0.88 Ω

Tepe Reflow Sıcaklığı (°C)

260

Operating Temperaturemax

175 °C

Feedback Capmax Crss

0.7 pF

Part Life Cycle Code

Active

ECCN Kodu

EAR99

Transistor Application

SWITCHING

Exterior Housing Material

1

Case Connection

DRAIN

Jesd30 Code

R-PSSO-G7

Yüzey Montaj

YES

Package Shape

RECTANGULAR

Package Body Material

PLASTIC/EPOXY

Polaritychannel Type

N-CHANNEL

Pulsed Drain Currentmax Idm

13.3 A

Terminal Pozisyonu

SINGLE

Rohs Code

Yes

REACH Uyumluluk Kodu

unknown

Package Style

SMALL OUTLINE

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Temperaturemin

-55 °C

Ds Breakdown Voltagemin

1700 V

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Drain Currentmax Id

5.2 A

Operating Mode

ENHANCEMENT MODE

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Number Of Terminals

7

Date Of Intro

2020-04-27