ITD50N04S4L07ATMA1

Specifications

Transistor Element Material

SILICON

Kılıf / Paket

TO-252-5, DPak (4 Leads + Tab), TO-252AD

Paket

Bulk

Drainsource On Resistancemax

0.0072 Ω

Reflow Temperaturemax S

NOT SPECIFIED

Terminal Formu

GULL WING

Package Body Material

PLASTIC/EPOXY

Configuration

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

Rohs Code

Yes

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Vgsth Max Id

2.2V @ 18μA

Terminal Pozisyonu

SINGLE

Reference Standard

AEC-Q101

Çalışma Sıcaklığı

-55°C ~ 175°C (TJ)

Package Style

SMALL OUTLINE

Drain To Source Voltage Vdss

40V

REACH Uyumluluk Kodu

not_compliant

Fet Feature

Logic Level Gate

Risk Rank

5.73

Fabrika Tedarik Süresi

1 Week

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Tedarikçi Cihaz Paketi

PG-TO252-5-311

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Montaj Tipi

Surface Mount

JESD-609 Kodu

e3

Avalanche Energy Rating Eas

45 mJ

Input Capacitance Ciss Max Vds

2480pF @ 25V

Jedec95 Code

TO-252

Terminal Kaplaması

Tin (Sn)

Number Of Terminals

4

ECCN Kodu

EAR99

Fet Type

2 N-Channel (Dual)

Ds Breakdown Voltagemin

40 V

Case Connection

DRAIN

Ürün Durumu

Active

Drain Currentmax Id

50 A

Current Continuous Drain Id25

50A (Tc)

Package Description

SMALL OUTLINE, R-PSSO-G4

Part Life Cycle Code

Active

Yüzey Montaj

YES