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IRS2011SPBF

Infineon Technologies

IRS2011SPBF

Gate Drivers ICs

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Specifications

Pin Sayısı
8
Yükseklik
1.4986mm
Terminal Pozisyonu
DUAL
Input Offset Voltage Vos
200V
Reach Svhc
No SVHC
Max Supply Current
300μA
Fabrika Tedarik Süresi
12 Weeks
Power Supplies
15V
Turn On Delay Time
20 ns
ECCN Kodu
EAR99
Çalışma Sıcaklığı
-40°C~150°C TJ
Fonksiyon Sayısı
1
Builtin Protections
TRANSIENT; UNDER VOLTAGE
Nem Hassasiyeti (MSL)
2 (1 Year)
JESD-609 Kodu
e3
Kurşunsuz
Lead Free
Parça Durumu
Active
Rise Time
40ns
Release Time
60 ns
Radyasyon Dayanımı
No
Terminal Sayısı
8
Terminal Formu
GULL WING
Ambalaj
Tube
Montaj Tipi
Surface Mount
Kılıf / Paket
8-SOIC (0.154, 3.90mm Width)
Power Dissipation
625mW
Besleme Gerilimi
15V
Logic Voltagevil Vih
0.8V 2.7V
Montaj
Surface Mount
Besleme Gerilimi
10V~20V
Terminal Kaplaması
Matte Tin (Sn)
Output Current
1A
Gate Type
N-Channel MOSFET
Max Power Dissipation
625mW
Giriş Tipi
Inverting
Propagation Delay
80 ns
Yayın Yılı
1996
Number Of Outputs
2
Uzunluk
4.9784mm
Max Output Current
1A

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