IRLHS6376TR2PBF

Specifications

Nominal Vgs

800 mV

Rds On Max Id Vgs

63mOhm @ 3.4A, 4.5V

Turn Off Delay Time

11 ns

Uzunluk

2.1mm

Input Capacitance Ciss Max Vds

270pF @ 25V

Maks. Çalışma Sıcaklığı

150°C

Continuous Drain Current Id

3.6A

Reach Svhc

No SVHC

Fall Time Typ

9.4 ns

Threshold Voltage

800mV

Gate To Source Voltage Vgs

12V

Genişlik

2.1mm

Drain To Source Breakdown Voltage

30V

Fet Type

2 N-Channel (Dual)

Element Configuration

Dual

Gate Charge Qg Max Vgs

2.8nC @ 4.5V

Rds On Max

63 mΩ

Ambalaj

Cut Tape (CT)

Drain To Source Resistance

63mOhm

Current Continuous Drain Id25

3.6A

Tedarikçi Cihaz Paketi

6-PQFN (2x2)

Radyasyon Dayanımı

No

Drain To Source Voltage Vdss

30V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Seri

HEXFET®

Yayın Yılı

2009

Turn On Delay Time

4.4 ns

Direnç

63MOhm

Fet Feature

Logic Level Gate

Recovery Time

12 ns

Vgsth Max Id

1.1V @ 10μA

Parça Durumu

Obsolete

Montaj

Surface Mount

RoHS Durumu

RoHS Compliant

Yükseklik

950μm

Pin Sayısı

6

Min. Çalışma Sıcaklığı

-55°C

Power Max

1.5W

Input Capacitance

270pF

Temel Parça No

IRLHS6376