IRLHS6276TRPBF

Specifications

Input Capacitance Ciss Max Vds

310pF @ 10V

Reach Svhc

No SVHC

Transistor Element Material

SILICON

Continuous Drain Current Id

4.5A

Nominal Vgs

800 mV

Terminal Sayısı

6

Rds On Max Id Vgs

45m Ω @ 3.4A, 4.5V

Turn Off Delay Time

10 ns

Fet Type

2 N-Channel (Dual)

Drain To Source Breakdown Voltage

20V

Fall Time Typ

4.9 ns

Tepe Reflow Sıcaklığı (°C)

260

Gate To Source Voltage Vgs

12V

Çalışma Sıcaklığı

-55°C~150°C TJ

ECCN Kodu

EAR99

Transistor Application

SWITCHING

Gate Charge Qg Max Vgs

3.1nC @ 4.5V

Drain Currentmax Abs Id

3.4A

Element Configuration

Dual

Ambalaj

Tape & Reel (TR)

Operating Mode

ENHANCEMENT MODE

Terminal Kaplaması

Matte Tin (Sn)

JESD-609 Kodu

e3

Drain To Source Voltage Vdss

20V

Radyasyon Dayanımı

No

Turn On Delay Time

4.4 ns

Fet Feature

Logic Level Gate

Direnç

45MOhm

Yayın Yılı

2011

Seri

HEXFET®

Tepe Reflow Süresi (maks. sn)

30

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Active

Montaj

Surface Mount

Vgsth Max Id

1.1V @ 10μA

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Fabrika Tedarik Süresi

12 Weeks

Number Of Elements

2

Pin Sayısı

6

RoHS Durumu

ROHS3 Compliant