Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Terminal Kaplaması
- Matte Tin (Sn)
- Radyasyon Dayanımı
- No
- Drain To Source Voltage Vdss
- 30V
- JESD-609 Kodu
- e3
- Element Configuration
- Dual
- Gate Charge Qg Max Vgs
- 11nC @ 4.5V
- Operating Mode
- ENHANCEMENT MODE
- Ambalaj
- Tape & Reel (TR)
- Fall Time Typ
- 15 ns
- Terminal Formu
- GULL WING
- Transistor Application
- SWITCHING
- Gate To Source Voltage Vgs
- 12V
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- ECCN Kodu
- EAR99
- Drain To Source Breakdown Voltage
- 30V
- Fet Type
- 2 N-Channel (Dual)
- Nominal Vgs
- 1.1 V
- Rds On Max Id Vgs
- 17.9m Ω @ 8.1A, 4.5V
- Turn Off Delay Time
- 34 ns
- Terminal Sayısı
- 8
- Input Capacitance Ciss Max Vds
- 1020pF @ 25V
- Continuous Drain Current Id
- 8.1A
- Transistor Element Material
- SILICON
- Reach Svhc
- No SVHC
- Temel Parça No
- IRL6372PBF
- Power Dissipation
- 2W
- Montaj Tipi
- Surface Mount
- Kurşunsuz
- Lead Free
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Rise Time
- 13ns
- Max Power Dissipation
- 2W
- RoHS Durumu
- ROHS3 Compliant
- Pin Sayısı
- 8
- Fabrika Tedarik Süresi
- 15 Weeks
- Number Of Elements
- 2
- Additional Feature
- HIGH RELIABILITY
- Vgsth Max Id
- 1.1V @ 10μA
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Pulsed Drain Currentmax Idm
- 65A
- Parça Durumu
- Not For New Designs
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