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IRGSL6B60KDPBF

Infineon Technologies

IRGSL6B60KDPBF

Single IGBTs

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$2.44
  • 10+ pcs$2.30
  • 100+ pcs$2.17
  • 500+ pcs$2.05

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Same-day dispatch from stock

Genuine parts

Verified sourcing

RoHS

Compliant

Support

Technical team support

Specifications

Akım Değeri
13A
Voltage Collector Emitter Breakdown Max
600 V
Reverse Recovery Time
70 ns
Power Dissipation
90W
Currentcollector Ic Max
13 A
Gateemitter Thr Voltagemax
5.5V
Radyasyon Dayanımı
No
Paket
Bulk
Reach Svhc
No SVHC
Turn Off Timenom Toff
258 ns
Genişlik
4.826mm
Number Of Elements
1
Giriş Tipi
Standard
Tedarikçi Cihaz Paketi
TO-262
Nem Hassasiyeti (MSL)
1 (Unlimited)
Polaritychannel Type
N-CHANNEL
Rise Time
17ns
Terminal Sayısı
3
Td Onoff25c
25ns/215ns
Vceon Max Vge Ic
2.2V @ 15V, 5A
Current Collector Pulsed Icm
26A
ECCN Kodu
EAR99
Turn On Time
45 ns
Transistor Element Material
SILICON
Max Collector Current
13A
Collectoremitter Breakdown Voltage
600V
Gate Charge
18.2nC
Kılıf / Paket
TO-262-3 Long Leads, I2Pak, TO-262AA
Terminal Kaplaması
Matte Tin (Sn) - with Nickel (Ni) barrier
Igbt Type
NPT
JESD-609 Kodu
e3
Collectoremitter Saturation Voltage
2V
Fall Timemax Tf
27ns
Switching Energy
110μJ (on), 135μJ (off)
Case Connection
COLLECTOR
Montaj Tipi
Through Hole
Collector Emitter Voltage Vceo
2.2V
Ürün Durumu
Obsolete
Yükseklik
9.652mm
Voltage Rated Dc
600V

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