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IRGR2B60KDTRPBF

Infineon Technologies

IRGR2B60KDTRPBF

Single IGBTs

RoHS: Compliant

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RoHS

Compliant

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Specifications

Element Configuration
Single
Radyasyon Dayanımı
No
Temel Parça No
IRGR2B60
Max Collector Current
6.3A
Max Power Dissipation
35W
Rise Timemax
25ns
Montaj
Surface Mount
Fall Timemax Tf
75ns
Power Max
35W
Td Onoff25c
11ns/150ns
Nem Hassasiyeti (MSL)
1 (Unlimited)
Yayın Yılı
2013
Current Collector Pulsed Icm
8A
ECCN Kodu
EAR99
Giriş Tipi
Standard
Ambalaj
Tape & Reel (TR)
Gateemitter Voltagemax
20V
Switching Energy
74μJ (on), 39μJ (off)
Reverse Recovery Time
68 ns
Montaj Tipi
Surface Mount
RoHS Durumu
RoHS Compliant
Test Conditions
400V, 2A, 100 Ω, 15V
Fabrika Tedarik Süresi
18 Weeks
Gate Charge
12nC
Parça Durumu
Obsolete
Kılıf / Paket
TO-252-3, DPak (2 Leads + Tab), SC-63
Çalışma Sıcaklığı
-55°C~150°C TJ
Pin Sayısı
3
Igbt Type
NPT
Gateemitter Thr Voltagemax
6V
Collector Emitter Voltage Vceo
2.25V
Polaritychannel Type
N-CHANNEL
Collectoremitter Breakdown Voltage
600V
Vceon Max Vge Ic
2.25V @ 15V, 2A

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