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C3 ChipZentronix

Infineon Technologies

IRG7CH50K10EF

Single IGBTs

In StockRoHS: Compliant

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RoHS

Compliant

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Specifications

Kılıf / Paket
Die
Configuration
SINGLE
Parça Durumu
Active
Gateemitter Voltagemax
30V
Terminal Formu
NO LEAD
Fabrika Tedarik Süresi
16 Weeks
Voltage Collector Emitter Breakdown Max
1200V
Turn On Time
120 ns
ECCN Kodu
EAR99
Yayın Yılı
2013
Yüzey Montaj
YES
Td Onoff25c
50ns/280ns
Number Of Elements
1
Polaritychannel Type
N-CHANNEL
Gateemitter Thr Voltagemax
7.5V
Terminal Sayısı
2
Turn Off Timenom Toff
635 ns
RoHS Durumu
ROHS3 Compliant
Montaj Tipi
Surface Mount
Currentcollector Ic Max
35A
Jesd30 Code
S-XUUC-N2
Transistor Element Material
SILICON
Nem Hassasiyeti (MSL)
1 (Unlimited)
Igbt Type
Trench Field Stop
Ambalaj
Bulk
Terminal Pozisyonu
UPPER
Vcesatmax
2.2 V
Vceon Max Vge Ic
2.2V @ 15V, 25A
Gate Charge
170nC
Çalışma Sıcaklığı
-40°C~175°C TJ
Transistor Application
POWER CONTROL
Test Conditions
600V, 35A, 10 Ω, 15V
Giriş Tipi
Standard

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