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C3 ChipZentronix

Infineon Technologies

IRG7CH30K10EF

Single IGBTs

RoHS: Compliant

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RoHS

Compliant

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Specifications

Terminal Formu
NO LEAD
Fabrika Tedarik Süresi
16 Weeks
Kılıf / Paket
Die
Configuration
SINGLE
Parça Durumu
Active
Gateemitter Voltagemax
30V
Yayın Yılı
2013
Yüzey Montaj
YES
Voltage Collector Emitter Breakdown Max
1200V
Turn On Time
38.5 ns
ECCN Kodu
EAR99
Polaritychannel Type
N-CHANNEL
Number Of Elements
1
Td Onoff25c
10ns/90ns
Gateemitter Thr Voltagemax
7.5V
Terminal Sayısı
2
Turn Off Timenom Toff
311 ns
Montaj Tipi
Surface Mount
RoHS Durumu
ROHS3 Compliant
Currentcollector Ic Max
10A
Transistor Element Material
SILICON
Jesd30 Code
R-XUUC-N2
Ambalaj
Bulk
Nem Hassasiyeti (MSL)
1 (Unlimited)
Igbt Type
Trench
Gate Charge
4.8nC
Çalışma Sıcaklığı
-40°C~175°C TJ
Test Conditions
600V, 10A, 22 Ω, 15V
Giriş Tipi
Standard
Transistor Application
POWER CONTROL
Vceon Max Vge Ic
2.56V @ 15V, 10A
Vcesatmax
2.2 V
Terminal Pozisyonu
UPPER

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