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IRG4RC10SDTRRP

Infineon Technologies

IRG4RC10SDTRRP

Single IGBTs

In StockRoHS: Compliant

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Verified sourcing

RoHS

Compliant

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Specifications

Jesd30 Code
R-PSSO-G2
Pin Sayısı
3
Transistor Element Material
SILICON
Montaj Tipi
Surface Mount
RoHS Durumu
RoHS Compliant
Turn Off Timenom Toff
1780 ns
Collectoremitter Breakdown Voltage
600V
Tepe Reflow Süresi (maks. sn)
30
Terminal Kaplaması
Matte Tin (Sn) - with Nickel (Ni) barrier
Vceon Max Vge Ic
1.8V @ 15V, 8A
Fall Timemax Tf
1080ns
Switching Energy
310μJ (on), 3.28mJ (off)
Test Conditions
480V, 8A, 100 Ω, 15V
Giriş Tipi
Standard
Transistor Application
POWER CONTROL
Reverse Recovery Time
28 ns
Gate Charge
15nC
Çalışma Sıcaklığı
-55°C~150°C TJ
Max Collector Current
14A
Nem Hassasiyeti (MSL)
1 (Unlimited)
Element Configuration
Single
Ambalaj
Tape & Reel (TR)
Turn On Time
106 ns
ECCN Kodu
EAR99
Jedec95 Code
TO-252AA
JESD-609 Kodu
e3
Current Collector Pulsed Icm
18A
Yayın Yılı
1999
Parça Durumu
Obsolete
Gateemitter Voltagemax
20V
Radyasyon Dayanımı
No
Kılıf / Paket
TO-252-3, DPak (2 Leads + Tab), SC-63
Collector Emitter Voltage Vceo
1.8V
Fabrika Tedarik Süresi
17 Weeks
Power Dissipation
38W
Terminal Formu
GULL WING
Case Connection
COLLECTOR
Temel Parça No
IRG4RC10SDPBF
Tepe Reflow Sıcaklığı (°C)
260
Additional Feature
LOW CONDUCTION LOSS

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