Volume pricing
- 1+ pcs$3.51
- 10+ pcs$3.31
- 100+ pcs$3.13
- 500+ pcs$2.95
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Genişlik
- 5.3mm
- Switching Energy
- 640μJ (on), 920μJ (off)
- Vceon Max Vge Ic
- 4.2V @ 15V, 10A
- Giriş Tipi
- Standard
- Test Conditions
- 960V, 10A, 23 Ω, 15V
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Gate Charge
- 53nC
- Collectoremitter Breakdown Voltage
- 1.2kV
- Transistor Element Material
- SILICON
- Pin Sayısı
- 3
- Montaj Tipi
- Through Hole
- Number Of Elements
- 1
- Additional Feature
- LOW CONDUCTION LOSS
- Gateemitter Thr Voltagemax
- 6V
- Collector Emitter Voltage Vceo
- 4.2V
- Kılıf / Paket
- TO-247-3
- Power Dissipation
- 100W
- Rise Time
- 23ns
- Case Connection
- COLLECTOR
- Voltage Collector Emitter Breakdown Max
- 1200V
- Yayın Yılı
- 2000
- Akım Değeri
- 20A
- Max Collector Current
- 20A
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Element Configuration
- Single
- Ambalaj
- Tube
- Fall Timemax Tf
- 170ns
- Transistor Application
- MOTOR CONTROL
- Turn Off Timenom Toff
- 640 ns
- RoHS Durumu
- ROHS3 Compliant
- Uzunluk
- 15.875mm
- Reach Svhc
- No SVHC
- Voltage Rated Dc
- 1.2kV
- Max Power Dissipation
- 100W
- Td Onoff25c
- 28ns/200ns
- Montaj
- Through Hole
- Yükseklik
- 20.3mm
- Polaritychannel Type
- N-CHANNEL
- Collectoremitter Saturation Voltage
- 3.1V
- Terminal Sayısı
- 3
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