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IRG4BC30KD-STRR

Infineon Technologies

IRG4BC30KD-STRR

Single IGBTs

In StockRoHS: Compliant

Shipping

Same-day dispatch from stock

Genuine parts

Verified sourcing

RoHS

Compliant

Support

Technical team support

Specifications

Yüzey Montaj
YES
Terminal Formu
GULL WING
Gate Charge
67nC
Transistor Element Material
SILICON
JESD-609 Kodu
e3
Power Max
100W
Tepe Reflow Süresi (maks. sn)
30
Current Collector Pulsed Icm
58A
Çalışma Sıcaklığı
-55°C~150°C TJ
Currentcollector Ic Max
28A
Giriş Tipi
Standard
Kılıf / Paket
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Parça Durumu
Obsolete
RoHS Durumu
Non-RoHS Compliant
Nem Hassasiyeti (MSL)
1 (Unlimited)
Montaj Tipi
Surface Mount
Configuration
SINGLE WITH BUILT-IN DIODE
Additional Feature
LOW CONDUCTION LOSS
Td Onoff25c
60ns/160ns
Switching Energy
600μJ (on), 580μJ (off)
Power Dissipationmax Abs
100W
Fall Timemax Tf
120ns
Ambalaj
Tape & Reel (TR)
Vceon Max Vge Ic
2.7V @ 15V, 16A
Transistor Application
MOTOR CONTROL
Voltage Collector Emitter Breakdown Max
600V
Test Conditions
480V, 16A, 23 Ω, 15V
Tepe Reflow Sıcaklığı (°C)
260
Terminal Sayısı
2
Terminal Kaplaması
Matte Tin (Sn) - with Nickel (Ni) barrier
Gateemitter Voltagemax
20V
Number Of Elements
1
Turn Off Timenom Toff
370 ns
Reverse Recovery Time
42ns
Case Connection
COLLECTOR
Terminal Pozisyonu
SINGLE
Yayın Yılı
2000
Qualification Status
Not Qualified
Turn On Time
100 ns
Polaritychannel Type
N-CHANNEL

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