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IRG4BC30FDSTRRP

Infineon Technologies

IRG4BC30FDSTRRP

Single IGBTs

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$4.19
  • 10+ pcs$3.95
  • 100+ pcs$3.72
  • 500+ pcs$3.51

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RoHS

Compliant

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Specifications

Max Collector Current
31A
Terminal Sayısı
2
Test Conditions
480V, 17A, 23 Ω, 15V
Tepe Reflow Sıcaklığı (°C)
260
Vceon Max Vge Ic
1.8V @ 15V, 17A
Transistor Application
POWER CONTROL
Weight
260.39037mg
Ambalaj
Tape & Reel (TR)
Switching Energy
630μJ (on), 1.39mJ (off)
Td Onoff25c
42ns/230ns
Max Power Dissipation
100W
Element Configuration
Single
Pin Sayısı
3
Gateemitter Thr Voltagemax
6V
Turn On Time
69 ns
Polaritychannel Type
N-CHANNEL
Jesd30 Code
R-PSSO-G2
Case Connection
COLLECTOR
Reverse Recovery Time
42 ns
Collector Emitter Voltage Vceo
1.8V
Turn Off Timenom Toff
620 ns
Yayın Yılı
2004
Terminal Kaplaması
Matte Tin (Sn) - with Nickel (Ni) barrier
Number Of Elements
1
Gateemitter Voltagemax
20V
Giriş Tipi
Standard
Radyasyon Dayanımı
No
Kılıf / Paket
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Çalışma Sıcaklığı
-55°C~150°C TJ
Fabrika Tedarik Süresi
13 Weeks
Collectoremitter Breakdown Voltage
600V
Current Collector Pulsed Icm
120A
Power Max
100W
Tepe Reflow Süresi (maks. sn)
30
Terminal Formu
GULL WING
Gate Charge
51nC
JESD-609 Kodu
e3
Transistor Element Material
SILICON
Montaj Tipi
Surface Mount
Nem Hassasiyeti (MSL)
1 (Unlimited)

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