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IRG4BC30FD-STRR

Infineon Technologies

IRG4BC30FD-STRR

Single IGBTs

In StockRoHS: Compliant

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Same-day dispatch from stock

Genuine parts

Verified sourcing

RoHS

Compliant

Support

Technical team support

Specifications

Kılıf / Paket
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Giriş Tipi
Standard
Currentcollector Ic Max
31A
Çalışma Sıcaklığı
-55°C~150°C TJ
Current Collector Pulsed Icm
120A
Tepe Reflow Süresi (maks. sn)
30
Power Max
100W
Transistor Element Material
SILICON
JESD-609 Kodu
e3
Gate Charge
51nC
Terminal Formu
GULL WING
Yüzey Montaj
YES
Configuration
SINGLE WITH BUILT-IN DIODE
Montaj Tipi
Surface Mount
RoHS Durumu
Non-RoHS Compliant
Nem Hassasiyeti (MSL)
1 (Unlimited)
Parça Durumu
Obsolete
Test Conditions
480V, 17A, 23 Ω, 15V
Tepe Reflow Sıcaklığı (°C)
260
Terminal Sayısı
2
Voltage Collector Emitter Breakdown Max
600V
Transistor Application
POWER CONTROL
Vceon Max Vge Ic
1.8V @ 15V, 17A
Td Onoff25c
42ns/230ns
Switching Energy
630μJ (on), 1.39mJ (off)
Power Dissipationmax Abs
100W
Ambalaj
Tape & Reel (TR)
Fall Timemax Tf
230ns
Jesd30 Code
R-PSSO-G2
Polaritychannel Type
N-CHANNEL
Turn On Time
69 ns
Gateemitter Thr Voltagemax
6V
Terminal Pozisyonu
SINGLE
Yayın Yılı
2004
Qualification Status
Not Qualified
Turn Off Timenom Toff
620 ns
Reverse Recovery Time
42ns
Case Connection
COLLECTOR
Gateemitter Voltagemax
20V
Number Of Elements
1

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