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IRG4BC20UD-STRR

Infineon Technologies

IRG4BC20UD-STRR

Single IGBTs

In StockRoHS: Compliant

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Verified sourcing

RoHS

Compliant

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Specifications

Current Collector Pulsed Icm
52A
Tepe Reflow Süresi (maks. sn)
30
Power Max
60W
Transistor Element Material
SILICON
JESD-609 Kodu
e3
Yüzey Montaj
YES
Terminal Formu
GULL WING
Gate Charge
27nC
Kılıf / Paket
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Giriş Tipi
Standard
Çalışma Sıcaklığı
-55°C~150°C TJ
Currentcollector Ic Max
13A
Parça Durumu
Obsolete
Montaj Tipi
Surface Mount
Configuration
SINGLE WITH BUILT-IN DIODE
RoHS Durumu
Non-RoHS Compliant
Nem Hassasiyeti (MSL)
1 (Unlimited)
Transistor Application
POWER CONTROL
Voltage Collector Emitter Breakdown Max
600V
Vceon Max Vge Ic
2.1V @ 15V, 6.5A
Td Onoff25c
39ns/93ns
Power Dissipationmax Abs
60W
Switching Energy
160μJ (on), 130μJ (off)
Ambalaj
Tape & Reel (TR)
Fall Timemax Tf
170ns
Tepe Reflow Sıcaklığı (°C)
260
Test Conditions
480V, 6.5A, 50 Ω, 15V
Terminal Sayısı
2
Gateemitter Voltagemax
20V
Number Of Elements
1
Terminal Kaplaması
Matte Tin (Sn) - with Nickel (Ni) barrier
Turn On Time
55 ns
Polaritychannel Type
N-CHANNEL
Jesd30 Code
R-PSSO-G2
Gateemitter Thr Voltagemax
6V
Qualification Status
Not Qualified
Yayın Yılı
2001
Terminal Pozisyonu
SINGLE
Turn Off Timenom Toff
320 ns
Case Connection
COLLECTOR

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