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C3 ChipZentronix
IRG4BC20UDSTRLP

Infineon Technologies

IRG4BC20UDSTRLP

Single IGBTs

In StockRoHS: Compliant

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Genuine parts

Verified sourcing

RoHS

Compliant

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Specifications

Terminal Kaplaması
Matte Tin (Sn) - with Nickel (Ni) barrier
Number Of Elements
1
Gateemitter Voltagemax
20V
REACH Uyumluluk Kodu
compliant
Gateemitter Thr Voltagemax
6V
Turn On Time
55 ns
Polaritychannel Type
N-CHANNEL
Jesd30 Code
R-PSSO-G2
Case Connection
COLLECTOR
Reverse Recovery Time
37ns
Turn Off Timenom Toff
320 ns
Qualification Status
Not Qualified
Yayın Yılı
2010
Terminal Pozisyonu
SINGLE
Vceon Max Vge Ic
2.1V @ 15V, 6.5A
Voltage Collector Emitter Breakdown Max
600V
Transistor Application
POWER CONTROL
Fall Timemax Tf
170ns
Ambalaj
Tape & Reel (TR)
Power Dissipationmax Abs
60W
Switching Energy
160μJ (on), 130μJ (off)
Td Onoff25c
39ns/93ns
Terminal Sayısı
2
Test Conditions
480V, 6.5A, 50 Ω, 15V
Tepe Reflow Sıcaklığı (°C)
260
Parça Durumu
Obsolete
Montaj Tipi
Surface Mount
Configuration
SINGLE WITH BUILT-IN DIODE
Nem Hassasiyeti (MSL)
1 (Unlimited)
RoHS Durumu
RoHS Compliant
Current Collector Pulsed Icm
52A
Power Max
60W
Tepe Reflow Süresi (maks. sn)
30
Yüzey Montaj
YES
Terminal Formu
GULL WING
Gate Charge
27nC
JESD-609 Kodu
e3
Transistor Element Material
SILICON
Giriş Tipi
Standard
Kılıf / Paket
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

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