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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Uzunluk
- 10.6172mm
- Vgsth Max Id
- 4.9V @ 100μA
- Turn On Delay Time
- 8.4 ns
- Gate Charge Qg Max Vgs
- 29nC @ 10V
- Direnç
- 100MOhm
- Kılıf / Paket
- TO-220-5 Full Pack
- Fet Type
- 2 N-Channel (Dual)
- Avalanche Energy Rating Eas
- 130 mJ
- Nominal Vgs
- 4.9 V
- Yayın Yılı
- 2006
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Montaj Tipi
- Through Hole
- Turn Off Delay Time
- 18 ns
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Terminal Pozisyonu
- SINGLE
- Kurşunsuz
- Lead Free
- Max Power Dissipation
- 21W
- Number Of Elements
- 2
- Recovery Time
- 110 ns
- Transistor Application
- AMPLIFIER
- Ambalaj
- Tube
- Parça Durumu
- Active
- Operating Mode
- ENHANCEMENT MODE
- Drain To Source Voltage Vdss
- 200V
- ECCN Kodu
- EAR99
- Pin Sayısı
- 5
- RoHS Durumu
- ROHS3 Compliant
- Rds On Max Id Vgs
- 100m Ω @ 5.5A, 10V
- Drain To Source Breakdown Voltage
- 200V
- Radyasyon Dayanımı
- No
- Threshold Voltage
- 4.9V
- Transistor Element Material
- SILICON
- Genişlik
- 4.826mm
- Power Dissipation
- 21W
- Gate To Source Voltage Vgs
- 20V
- Montaj
- Through Hole
- Terminal Sayısı
- 5
- Continuous Drain Current Id
- 9.1A
- Yükseklik
- 9.02mm
- Rise Time
- 8ns
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