Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Kılıf / Paket
- TO-220-5 Full Pack (Formed Leads)
- Transistor Element Material
- SILICON
- Power Dissipation
- 18W
- ECCN Kodu
- EAR99
- Vgsth Max Id
- 4.9V @ 50μA
- Operating Mode
- ENHANCEMENT MODE
- Drain To Source Voltage Vdss
- 150V
- Turn On Delay Time
- 7 ns
- Pin Sayısı
- 5
- Gate Charge Qg Max Vgs
- 20nC @ 10V
- RoHS Durumu
- RoHS Compliant
- Radyasyon Dayanımı
- No
- Drain To Source Breakdown Voltage
- 150V
- Rds On Max Id Vgs
- 95m Ω @ 5.2A, 10V
- Additional Feature
- HIGH RELIABILITY
- Case Connection
- ISOLATED
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Terminal Pozisyonu
- SINGLE
- Input Capacitance Ciss Max Vds
- 810pF @ 25V
- Pulsed Drain Currentmax Idm
- 34A
- Number Of Elements
- 2
- Max Power Dissipation
- 18W
- Ambalaj
- Tube
- Parça Durumu
- Obsolete
- Transistor Application
- SWITCHING
- Montaj
- Through Hole
- Fet Type
- 2 N-Channel (Dual)
- Terminal Sayısı
- 5
- Gate To Source Voltage Vgs
- 20V
- Rise Time
- 6.6ns
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Avalanche Energy Rating Eas
- 77 mJ
- Continuous Drain Current Id
- 8.7A
- Fall Time Typ
- 3.1 ns
- Montaj Tipi
- Through Hole
- Yayın Yılı
- 2009
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Fet Feature
- Standard
- Element Configuration
- Dual
- Turn Off Delay Time
- 13 ns
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